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FQB22P10TM_F085 100V P-Channel MOSFET
February 2009
QFET
(R)
FQB22P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
* * * * * * * * * -22A, -100V, RDS(on) = 0.125 @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant
D
D
G
S
G
D2-PAK
FQB Series
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
S FQB22P10TM_F085 -100 -22 -15.6 Units V A A A V mJ A mJ V/ns W W W/C C C
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
-88 30 710 -22 12.5 -6.0 3.75 125 0.83 -55 to +175 300
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) *
(Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG TL
Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.2 40 62.5 Units C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount) (c)2009 Fairchild Semiconductor Corporation FQB22P10TM_F085 Rev. A 1 www.fairchildsemi.com
FQB22P10TM_F085 100V P-Channel MOSFET
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 125C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -100 -------0.1 -------1 -10 -100 100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -11 A VDS = -40 V, ID = -11 A
(Note 4)
-2.0 ---
-0.096 13.5
-4.0 0.125 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---1170 460 160 1500 600 200 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -80 V, ID = -22 A, VGS = -10 V VDD = -50 V, ID = -22 A, RG = 25
(Note 4, 5)
------(Note 4, 5)
17 170 60 110 40 7.0 21
45 350 130 230 50 ---
ns ns ns ns nC nC nC
--
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -22 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -22 A, dIF / dt = 100 A/s
(Note 4)
------
---110 0.6
-22 -88 -4.0 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -22A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQB22P10TM_F085 Rev. A
2
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FQB22P10TM_F085 100V P-Channel MOSFET
Typical Characteristics
-ID, Drain Current [A]
10
1
-ID , Drain Current [A]
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V Top :
10
1
175
10
0
25 -55
Notes : 1. VDS = -40V 2. 250 s Pulse Test
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
-1
10
10
0
10
1
10
-1
2
4
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
6
8
10
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics Figure 2. Transfer Characteristics
0.5
VGS = - 10V
-I DR , Reverse Drain Current [A]
RDS(on) [], Drain-Source On-Resistance
0.4
10
1
0.3 VGS = - 20V
0.2
10
0
175 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.1
Note : TJ = 25
0.0
0
10
20
30
-ID , Drain Current [A]
40
50
60
70
80
90
100
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
3500 3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
Ciss
2500
10
VDS = -20V VDS = -50V VDS = -80V
Coss
-V GS , Gate-Source Voltage [V]
8
Capacitance [pF]
2000 1500 1000 500 0 -1 10
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
Crss
4
2
Note : ID = -22 A
0
10
0
10
1
0
10
20
30
40
50
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
FQB22P10TM_F085 Rev. A
3
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FQB22P10TM_F085 100V P-Channel MOSFET
Typical Characteristics
(Continued)
1.2
2.5
-BV DSS , (Norm alized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = -250 A
0.5
Notes : 1. VGS = -10 V 2. ID = -11 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
25
Operation in This Area is Limited by R DS(on)
10
2
20
100 s
-I D, Drain Current [A]
-I D, Drain Current [A]
1 ms
10
1
10 ms DC
15
10
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
5
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
-VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
( t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5 0 .2 0 .1
10
-1
N o te s : 1 . Z J C ( t) = 1 .2 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
0 .0 5 0 .0 2 0 .0 1 s i n g l e p u ls e
PDM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
FQB22P10TM_F085 Rev. A
4
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FQB22P10TM_F085 100V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS -10V Qgs Qg
VGS DUT
-3mA
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG -10V VGS
RL VDD
td(on)
t on tr td(off)
t off tf
VGS
10%
DUT VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
VDS ID RG -10V
tp
L
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD
tp
Time VDS (t)
VDD DUT
VDD ID (t) IAS BVDSS
FQB22P10TM_F085 Rev. A
5
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FQB22P10TM_F085 100V P-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+ VDS DUT I SD _
L
Driver RG
Compliment of DUT (N-Channel)
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
I SD ( DUT )
Body Diode Reverse Current
IRM
di/dt IFM , Body Diode Forward Current
VDS ( DUT )
VSD
Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
VDD
FQB22P10TM_F085 Rev. A
6
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FQB22P10TM_F085 100V P-Channel MOSFET
Package Dimensions
D2-PAK
(0.40) 9.90 0.20 4.50 0.20 1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10 0.15 2.54 0.30
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2.40 0.20
4.90 0.20
(0.75)
1.27 0.10 2.54 TYP
0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40)
0
~3
+0.10
0.50 -0.05
10.00 0.20 15.30 0.30
(1.75)
(7.20) 0.80 0.10 4.90 0.20
(2XR0.45)
Dimensions in Millimeters
FQB22P10TM_F085 Rev. A 7
9.20 0.20
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Rev. I38 FQB22P10TM_F085 Rev. A 8 www.fairchildsemi.com

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